Wide Bandgap Switching Analysis

PulseIQ

Intelligent Switching Analysis
for SiC & GaN Devices

Automatically extract device characteristics from MOSFET datasheets and predict switching performance across all operating conditions — without manual parameter extraction.

6
Switching Metrics
Comprehensively analyzed
Faster Design Cycles
vs manual workflows
SiC + GaN
Device Technologies
Supported natively
CSV
Data Export
Converter-level design
Platform Capabilities

Everything You Need
to Analyse Switching

Five tightly integrated capabilities that compress weeks of analysis into minutes.

Automatic Datasheet Upload

Upload any MOSFET datasheet and PulseIQ intelligently extracts all key device parameters — no manual entry required.

Intelligent Parasitic Suggestions

Automatically suggests circuit parasitic inductances and capacitances so you reach analysis immediately.

User-Defined Operating Conditions

Specify voltage, current range, and gate drive parameters to precisely match your target application.

Comprehensive Switching Metrics

Switching loss, transition time, dv/dt, di/dt, overcurrent, and overvoltage — all evaluated versus current.

Data Export Capability

Export all computed results as CSV files for seamless integration with converter-level design workflows.

Supported Device Technologies

SiC & GaN — Built In

Native support for Silicon Carbide MOSFETs and Enhancement-mode GaN HEMTs — the two dominant wide-bandgap technologies for modern power conversion.

SiC
SiC MOSFET
Silicon Carbide
GaN
GaN HEMT
Enhancement-mode
Switching Analysis Outputs

Critical Metrics for
Power Converter Design

PulseIQ evaluates switching performance across the full operating current range and delivers every metric your converter development demands.

Turn-on Switching Loss
Turn-off Switching Loss
Switching Transition Times
~
Voltage Slew Rate (dv/dt)
Current Slew Rate (di/dt)
!
Overcurrent Behaviour
Overvoltage Conditions
Switching Waveform
── Vds- - Ids
0t_sw/2t_swE_on
Turn-ON
42 μJ
Turn-OFF
28 μJ
Total
70 μJ
Typical Workflow

From Datasheet to
Design Metrics in Minutes

01

Upload Datasheet

Upload your MOSFET datasheet — PulseIQ automatically parses and extracts all device parameters.

02

Parameter Extraction

Intelligent algorithms extract gate charge curves, capacitances, threshold voltages, and package parasitics.

03

Parasitic Suggestions

PulseIQ suggests circuit parasitic values based on device package and typical layout practices.

04

Set Operating Conditions

Define your DC bus voltage, load current range, and gate drive resistances for your application.

05

Switching Analysis

Full switching analysis runs across the entire current range — turn-on, turn-off, dv/dt, di/dt, losses.

06

Export Results

Download all computed metrics as CSV files ready for your converter-level loss budget and thermal design.

Applications

Built for Every
Power Conversion Domain

From electric vehicles to data centres, PulseIQ accelerates switching analysis wherever wide-bandgap devices are used.

Electric Vehicle Power Converters

Optimise switching losses for EV inverters and on-board chargers operating at high dv/dt.

Renewable Energy Inverters

Evaluate SiC performance in solar and wind inverters for maximum efficiency at grid frequencies.

Motor Drive Systems

Characterise switching behaviour across the full torque-speed range for industrial motor drives.

High-Frequency DC-DC Converters

Analyse GaN switching at MHz frequencies for compact, high-density power supplies.

Wide-Bandgap Device Evaluation

Benchmark and compare SiC and GaN devices for new design selection without lab measurements.

Data Centre Power Supplies

Meet stringent efficiency targets for 48V server power delivery using accurate loss prediction.

Contact

Ready to Accelerate
Your Power Design?

Get in touch with the team at Simivolt Dynamics and access PulseIQ for your next power converter project.

Or email directly: sales@simivoltdynamics.com